Innovative technology leads the industry
For 60 years, Mitsubishi Electric has been able to maintain its leading position in the industry for continuous and innovative research and development.
As the core of power components, the importance of IGBT chips is self-evident. In the development of the latest technology of power semiconductors, Mitsubishi Electric's IGBT chip technology has been progressing. The third-generation IGBT is a flat-type structure, the fourth-generation IGBT is a trench structure, the fifth generation is CSTBTTM, and the sixth generation is ultra-thin. CSTBTTM, the seventh generation IGBT construction is more refined and ultra-thin CSTBTTM.
From the performance index (FOM) of the IGBT chip, the sixth generation has increased by 16 times compared with the first generation, and the seventh generation has increased by 26 times compared with the first generation. From the perspective of packaging technology, in the small-capacity consumer DIPIPMTM products, Mitsubishi Electric has adopted a packaging method of injection molding. In medium-capacity industrial products and electric vehicle-specific products, a box type package is adopted. In high-capacity products, especially those used on high-speed rail, high-performance silicon carbide aluminum substrates are used, which are then packaged in a box package.
At the same time of mass production and supply, Mitsubishi Electric is also making efforts for the next demand explosion point. Around 2022, Mitsubishi Electric will consider the investment of 12-inch power components production line. In the view of Dr. Gourab Majumdar, the IGBT chip market will grow substantially in 2020-2022.
SiC is the core technology direction of next-generation power semiconductors. Compared with traditional Si-IGBT modules, the main advantage of SiC power modules is that switching losses are greatly reduced. For specific inverter applications, this advantage can reduce inverter size, increase inverter efficiency and increase switching frequency. At present, the application fields of inverter devices based on SiC power devices are expanding. However, due to cost factors, the current market penetration of SiC power devices is very low. With the advancement of technology, the cost of silicon carbide will drop rapidly, and the future will be the mainstream products in the power semiconductor market.
“The silicon carbide power module can expand more applications due to its high temperature resistance, low power consumption and high reliability. Silicon carbide is the best choice for exploring new markets in the future,” said Dr. Gourab Majumdar.
Mitsubishi Electric has introduced the first generation of silicon carbide power modules since 2013. In fact, as early as 1994, Mitsubishi Electric began to develop SiC technology; since 2015, SiC power devices have entered many new application fields. In the same year, Mitsubishi Electric has developed the first full SiC power module, which is equipped with the locomotive traction system for installation on the Shinkansen in Japan. Mitsubishi Electric's SiC power module product line covers rated currents from 15A to 1200A and rated voltages from 600V to 3300V. Samples are available now.
Due to the rapid increase in demand for silicon carbide, Mitsubishi Electric invested in a 6-inch wafer production line in 2017 to reduce the chip size with new technology. Currently, the production line is progressing as planned, and mass production is expected in 2019.
The power electronics industry's requirements for power devices are more reflected in improving efficiency and reducing size power density, so the new SiCMOSFET power modules will gain more and more applications. In order to meet the requirements of the power device market for low noise, high efficiency, small size and light weight, Mitsubishi Electric has been committed to research and development of high-tech products. The development of a new generation of trench gate SiC MOSFET technology is being developed, which will further improve the relationship between short-circuit withstand and on-resistance, and plans to commercialize the new SiC MOSFET module by 2020.
